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HL8333G
GaAlAs Laser Diode
Description
The HL8333G is a high-power 0.8 m band GaAlAs laser diode with a TQW (triple quantum well) structure. It is suitable as a light source for optical disk memories, card readers and various other types of optical equipment. ODE-208-014C (Z) Rev.3 Jun. 13, 2006
Features
* Infrared light output: p = 820 to 840 nm * High power: standard continuous operation at 40 mW (CW), pulsed operation at 50 mW * Built-in monitor photodiode * Single longitudinal mode
Package Type * HL8333G: G2
Internal Circuit
1 3
PD
LD
2
Absolute Maximum Ratings
(TC = 25C)
Item Optical output power Pulse optical output power LD reverse voltage PD reverse voltage Operating temperature Symbol PO PO(pulse) VR(LD) VR(PD) Topr Ratings 40 50 * 2 30 -10 to +60 -40 to +85 Unit mW mW V V C C
Storage temperature Tstg Note: Pulse condition : Pulse width = 1 s, duty = 50%
Optical and Electrical Characteristics
(TC = 25C)
Item Threshold current Slope efficiency Operating current Beam divergence parallel to the junction Beam divergence perpendicular to the junction Astigmatism Lasing wavelength Monitor current Symbol Ith s IOP // AS p IS Min -- 0.4 -- 7 18 -- 820 20 Typ 40 0.5 120 10 22 5 830 100 Max 70 0.9 160 14 32 -- 840 130 Unit mA mW/mA mA m nm A Test Conditions -- 24 (mW) / (I(32mW) - I(8mW)) PO = 40 mW PO = 40 mW, FWHM PO = 40 mW, FWHM PO = 4 mW, NA = 0.4 PO = 40 mW PO = 4 mW, VR(PD) = 5 V
Rev.3 Jun. 13, 2006 page 1 of 4
HL8333G
Typical Characteristic Curves
Optical Output Power vs. Foward Current 50 Threshold Current vs. Case Temperature 100
Optical output power, PO (mW)
40 30 20 10 0
60C
Threshold current, Ith (mA)
200
TC = 0C 25C
50
30 20
0
40
80
120
160
10
0
10
20
30
40
50
60
Foward current, IF (mA)
Case temperature, TC (C)
Slope Efficiency vs. Case Temperature 1.0 200
Monitor Current vs. Case Temprature PO = 4 mW VR(PD) = 5 V
Slope efficiency, s (mW/mA)
Monitor current, IS (A)
0.8 0.6 0.4 0.2 0 0 10 20 30 40 50 60 Case temperature, TC (C)
160 120 80 40 0
0
10
20
30
40
50
60
Case temperature, TC (C)
Lasing Wavelength vs. Case Temperature 845 PO = 40 mW Far Field Pattern 1.0 PO = 40 mW 0.8 TC = 25C 0.6 0.4 0.2 0 -40 -30 -20 -10 0 10 20 40 50 30 Case temperature, TC (C) 60 0 10 20 30 40 Parallel Perpendicular
Lasing wavelength, lp (nm)
840 835
830 825 820
Relative intensity
Angle, ( )
Rev.3 Jun. 13, 2006 page 2 of 4
HL8333G
Package Dimensions
As of July, 2002
Unit: mm
9.0 +0 -0.025 1.0 0.1
(0.65)
(90) 3.5 0.2 0.3
Glass
7.2 +0.3 -0.2 6.2 0.2 (2.0)
Emitting Point
0.4 +0.1 -0
3 - 0.45 0.1 1 2 3
1
3
2
2.54 0.35
OPJ Code JEDEC JEITA Mass (reference value)
1.5 0.1
91
2.45
LD/G2 -- -- 1.1 g
Rev.3 Jun. 13, 2006 page 3 of 4
HL8333G
Cautions
1. Opnext Japan,Inc.(OPJ) neither warrants nor grants licenses of any our rights or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. OPJ bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. OPJ makes every attempt to ensure that its products are of high quality and reliability. However, contact our sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by OPJ particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. OPJ bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating OPJ product does not cause bodily injury, fire or other consequential damage due to operation of the OPJ product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from OPJ. 7. Contact our sales office for any questions regarding this document or OPJ products. 1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The laser beam shall be observed or adjusted through infrared camera or equivalent. 2. This product contains gallium arsenide (GaAs), which may seriously endanger your health even at very low doses. Please avoid treatment which may create GaAs powder or gas, such as disassembly or performing chemical experiments, when you handle the product. When disposing of the product, please follow the laws of your country and separate it from other waste such as industrial waste and household garbage. 3. Definition of items shown in this CAS is in accordance with that shown in Opto Device Databook issued by OPJ unless otherwise specified.
Sales Offices
Device Business Unit Opnext Japan, Inc.
Takagi Bldg., 3F, 1-3-9, Iwamoto-cho, Chiyoda-ku, Tokyo 101-0032 Japan Tel: (03) 3865-5591
For the detail of Opnext, Inc., see the following homepage:
Japan (Japanese) Other area (English) http://www.opnext.com/jp/products/ http://www.opnext.com/products/ (c)2007 Opnext Japan, Inc., All rights reserved. Printed in Japan.
Colophon 2.0
Rev.3 Jun. 13, 2006 page 4 of 4

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